NXH5104中文资料恩XP数据手册PDF规格书

General description

The NXP Semiconductors NXH5104 is a 4 Mbit serial electrically erasable and

programmable read-only memory (EEPROM). It provides byte level and page level serial

EEPROM functions, sector level protection and power-down functions. The device has

been developed for low-power low-voltage applications and is provided with a serial

peripheral interface (SPI) compatible interface.

Features and benefits

• Compact wafer-level chip-scale package (WLCSP) package

• – 7.8 mm2, 380 μm thick

– 13 bumps with 400 μm pitch

• Integrated power management unit (PMU)

• – VDD supply range 1.0 V to 2.0 V

– VDD(IO) supply range: VDD to 2.6 V

– Direct operation from ZnAir, NiMH, Silver-Zinc batteries

– Active peak current limiting

• Low current consumption

• – Average power down current < 5 μA

– Average read current 0.6 mA (VDD = VDD(IO) = 1.8 V, FSPI =5 MHz)

– Average write current 0.7 mA (VDD = VDD(IO) = 1.8 V, FSPI = 5 MHz)

• Low-power CMOS technology

• Auxiliary supply voltage enabling direct LED drive

• Self-timed program cycle

• – 256 byte page write buffer

– Partial page write allowed

• Write protect

• – Quarter, half or entire memory array

• Serial peripheral interface (SPI)

• – Speed up to 5 MHz for 1.2 V signaling level

– Speed up to 10 MHz for 1.8 V signaling level

– SPI mode 0 (0,0) and 3 (1,1) support

– SPI 3-wire support for SPI mode 0

• Fixed high supply mode for faster start-up

• Space-saving 2.80 mm × 2.74 mm wafer-level chip-scale package (WLCSP)

• Highly integrated: 1 external cap

• High reliability

• – 10-year data retention

– 500 000 program cycles

– Wear-out management

• Operating temperature −20 °C to +85 °C

• Support for different supply configurations

• Device ID and Unique ID

• Pb-free and RoHS compliant