NXH50C120L2C2ES1G分立半导体产品的晶体管-IGBT-模块规格书PDF中文资料

NXH50C120L2C2ES1G属于分立半导体产品的晶体管-IGBT-模块。由安森美半导体制造生产的NXH50C120L2C2ES1G晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。

The NXH50C120L2C2ESG is a transfer−molded power module

with low thermal resistance substrate containing

a converter-inverter-brake circuit consisting of six 50 A, 1600 V

rectifiers, six 50 A, 1200 V IGBTs with inverse diodes, one 35 A,

1200 V brake IGBT with brake diode and an NTC thermistor.

The NXH50C120L2C2ES1G is a transfer−molded power module

with low thermal resistance substrate containing a converter−inverter

circuit consisting of six 50 A, 1600 V rectifiers, six 50 A, 1200 V

IGBTs with inverse diodes, and an NTC thermistor.

特性 Features

• Low Thermal Resistance Substrate for Low Thermal Resistance

• Lower Package Height than Standard Case Modules

• 6 mm Clearance distance between pin to heatsink

• Compact 73 mm × 40 mm × 8 mm Package

• Solderable Pins

• Thermistor

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Typical Applications

• Industrial Motor Drives

• Servo Drives