1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS

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1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS

文件：184.13 Kbytes 页数：5 Pages

CEL

1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS

CEL

30 V, 3 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA. 2. Features and benefits • Low collector-emitter

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30 V, 3 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement: PBSS4330PAS Featu

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