MOSFET ??Power, Single, N-Channel 80 V, 2.8 m, 157 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：210.99 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 80 V, 2.7 m, 160 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：184.06 Kbytes 页数：7 Pages

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安森美半导体

丝印：6H801L；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 2.7 m, 160 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：184.06 Kbytes 页数：7 Pages

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安森美半导体

丝印：801LWF；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 2.7 m, 160 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：184.06 Kbytes 页数：7 Pages

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安森美半导体

丝印：6H801N；Package：DFN5；MOSFET ??Power, Single, N-Channel 80 V, 2.8 m, 157 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：210.99 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：6H801N；Package：DFN5；MOSFET ??Power, Single, N-Channel 80 V, 2.8 m, 157 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：210.99 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：801NWF；Package：DFN5；MOSFET ??Power, Single, N-Channel 80 V, 2.8 m, 157 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：210.99 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：801NWF；Package：DFN5；MOSFET ??Power, Single, N-Channel 80 V, 2.8 m, 157 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：210.99 Kbytes 页数：7 Pages

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安森美半导体

单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• NVMFS6H801NWF − Wettable Flank Option\n• Enhanced OpticalInspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive Qualified\n• RoHS Compliant;

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安森美半导体

MOSFET - Power, Single N-Channel, 80 V, 2.7 mΩ, 160 A - NVMFS6H801NL

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAPcapable suitable for automotive applications • Small Footprint (5x6mm)\n• Low RDS (on)\n• Low QG and Capacitance\n• NVMFS6H801NLWF -Wettable Flank Option\n• AEC-Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant\n;

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安森美半导体