MOSFET ??Power, Dual N-Channel 60 V, 6.5 m, 68 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：230.69 Kbytes 页数：7 Pages

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安森美半导体

丝印：5C668L；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 6.5 m, 68 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：230.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：668LWF；Package：DFN8；MOSFET ??Power, Dual N-Channel 60 V, 6.5 m, 68 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：230.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

功率 MOSFET，60V，68 A，6.5 mΩ，双 N 沟道

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (5x6 mm) for Compact Design\n• Low RDS(on) to Minimize Conduction Losses\n• Low QG and Capacitance to Minimize Driver Losses\n• NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection\n• AEC−Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Co;

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安森美半导体

包装：卷带（TR）卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 阵列 描述：T6 60V S08FL DUAL

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安森美半导体