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NVHL040N120SC1中文资料Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−3L数据手册ONSEMI规格书
NVHL040N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A
• Typical RDS(on) = 40mΩ
• Qualified for Automotive According to AEC−Q101
• Automotive Grade
• High Speed Switching and Low Capacitance
• Devices are Pb−Free and are RoHS Compliant
应用 Application
• On Board Charger (OBC)
• DC DC Inverter
• Automotive EV/HEV
技术参数
- 制造商编号
：NVHL040N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- AEC Qualified
：A
- Halide free
：H
- PPAP Capablee
：P
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：1200
- VGS Max (V)
：25
- VGS(th) Max (V)
：4.3
- ID Max (A)
：60
- PD Max (W)
：348
- RDS(on) Max @ VGS = 2.5 V(mΩ)
：NA
- RDS(on) Max @ VGS = 4.5 V(mΩ)
：NA
- RDS(on) Max @ VGS = 10 V(mΩ)
：NA
- Qg Typ @ VGS = 4.5 V (nC)
：NA
- Qg Typ @ VGS = 10 V (nC)
：NA
- Ciss Typ (pF)
：1781
- Package Type
：TO-247-3LD
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ON(安森美) |
23+ |
TO-247-3 |
15322 |
公司只做原装正品,假一赔十 |
询价 | ||
ON |
25+ |
TO-247 |
4500 |
原厂原装,价格优势 |
询价 | ||
ONSEMI |
两年内 |
N/A |
450 |
原装现货,实单价格可谈 |
询价 | ||
onsemi(安森美) |
24+ |
TO-247 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON Semiconductor |
21+ |
TO-247-3 |
3000 |
进口原装!长期供应!绝对优势价格(诚信经营)!! |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
安森美 |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ON(安森美) |
2447 |
- |
115000 |
450个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
onsemi |
23+ |
TO-247-3LD |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 |
