NVH4L075N065SC1数据手册ONSEMI中文资料规格书

描述 Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

特性 Features

• Qualified for Automotive According to AEC−Q101
• Automotive Grade Qualified
• Ultra Low Gate Charge (Typ. Qg = 61 nC)
• Low switching loss
• High Speed Switching with Low Capacitance (Coss = 107 pF)
• Low switching loss
• Zero reverse recovery current of body diode
• Higher system reliability in LLC and Phase shift full bridge circuit
• Kelvin Source configuration
• Lower switching loss and lower Vgs oscillation
• Typ. RDS(on) = 57 mΩ at Vgs = 18V
• 100% UIL Tested
• RoHS Compliant

应用 Application

• Automotive DC/DC and PFC
• Automotive On Board Charger