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NVH4L040N120SC1数据手册ONSEMI中文资料规格书
NVH4L040N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Max RDS(on) = 56mΩ at Vgs = 20V, Id = 35A
• Typical RDS(on) = 40mΩ
• Qualified for Automotive According to AEC−Q101
• Automotive Grade
• High Speed Switching and Low Capacitance
• Devices are Pb−Free and are RoHS Compliant
应用 Application
• On Board Charger (OBC)
• DC DC Inverter
• Automotive EV/HEV
技术参数
- 制造商编号
：NVH4L040N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- AEC Qualified
：A
- Halide free
：H
- PPAP Capablee
：P
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：1200
- VGS Max (V)
：25
- VGS(th) Max (V)
：4.3
- ID Max (A)
：58
- PD Max (W)
：319
- Ciss Typ (pF)
：1762
- Package Type
：TO-247-4
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ON |
23+ |
NA |
6800 |
原装正品,力挺实单 |
询价 | ||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
询价 | ||
onsemi |
23+ |
TO-247-4 |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
ONSEMI |
22 |
SOP12 |
6000 |
全新、原装 |
询价 | ||
onsemi(安森美) |
24+ |
TO-247-4 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON(安森美) |
24+ |
标准封装 |
8000 |
原装，正品 |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
8000 |
正规渠道,只有原装! |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 |
