首页>NVH4L020N120SC1>规格书详情
NVH4L020N120SC1数据手册ONSEMI中文资料规格书
NVH4L020N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
• Typical RDS(on) = 20mΩ
• Qualified for Automotive According to AEC−Q101
• Automotive Grade
• High Speed Switching and Low Capacitance
• Devices are Pb−Free and are RoHS Compliant
应用 Application
• On Board Charger (OBC)
• DC DC Inverter
• Automotive EV/HEV
技术参数
- 制造商编号
：NVH4L020N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- AEC Qualified
：A
- Halide free
：H
- PPAP Capablee
：P
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：1200
- VGS Max (V)
：+25/-5
- VGS(th) Max (V)
：4.3
- ID Max (A)
：102
- PD Max (W)
：510
- Ciss Typ (pF)
：2943
- Package Type
：TO-247-4
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ONSEMI |
两年内 |
NA |
89 |
实单价格可谈 |
询价 | ||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ON |
22+ |
NA |
2059 |
原装正品支持实单 |
询价 | ||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
询价 | ||
onsemi |
23+ |
TO-247-4 |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
onsemi(安森美) |
24+ |
TO-247-4 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
onsemi |
24+ |
原厂封装 |
27456 |
有挂就有货只做原装正品 |
询价 | ||
ON(安森美) |
24+ |
标准封装 |
8000 |
原装，正品 |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
8000 |
正规渠道,只有原装! |
询价 |
