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NVH4L160N120SC1中文资料Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L数据手册ONSEMI规格书
NVH4L160N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性 Features
• High Junction Temperature
• Tj = 175°C
• 1200V
• High UIS, Surge Current, and Avalanche
• Qualified for Automotive
应用 Application
• DC-DC Power
• On Board Charger
• EV/HEV
技术参数
- 制造商编号
：NVH4L160N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- AEC Qualified
：A
- Halide free
：H
- PPAP Capablee
：P
- Status
：Active
- Package Type
：TO-247-4
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ON |
23+ |
SSDC33 |
1300 |
正规渠道,只有原装! |
询价 | ||
ON(安森美) |
23+ |
SSDC33 |
18100 |
公司只做原装正品,假一赔十 |
询价 | ||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ON |
25+ |
SSDC33 |
5000 |
原厂原装,价格优势 |
询价 | ||
ON/安森美 |
22+ |
SSDC33 |
9000 |
原装正品,支持实单! |
询价 | ||
onsemi |
23+ |
TO-247-4 |
1356 |
原厂正品现货SiC MOSFET全系列 |
询价 | ||
onsemi(安森美) |
24+ |
TO-247-4 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON/安森美 |
24+ |
SSDC33 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
ON |
24+ |
SSDC33 |
5000 |
全新原装正品,现货销售 |
询价 |
