Power MOSFET 60 V, 0.81 m, 398.2 A, Single N?묬hannel

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ONSEMI

安森美半导体

丝印：001N06CL；Package：POWER88；Power MOSFET 60 V, 0.81 m, 398.2 A, Single N?묬hannel

文件：364.03 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET 60V, 328A, 0.81mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Small Footprint (8x8 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• RoHS Compliant;

ONSEMI

安森美半导体

Power MOSFET 60 V, 0.91 m, 376 A, Single N?묬hannel

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ONSEMI

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MOSFET - Power, Single N-Channel, TOLL 60 V, 0.9 m, 422 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：406.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 0.91 m, 376 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：400.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体