Power MOSFET 60 V, 0.91 m, 376 A, Single N?묬hannel

文件：311.78 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 60 V, 0.81 m, 398.2 A, Single N?묬hannel

文件：364.03 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：001N06CL；Package：POWER88；Power MOSFET 60 V, 0.81 m, 398.2 A, Single N?묬hannel

文件：364.03 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：001N06C；Package：POWER88；Power MOSFET 60 V, 0.91 m, 376 A, Single N?묬hannel

文件：311.78 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET, 60V Single N-Channel Power 88

MOSFET, 60V Single N-Channel, 376A, 0.91mΩ, Power 88 • Ultra Low RDS(on)\n• Minimize Conduction Loss and Improve Efficiency\n• Low Gate Charge and Capacitance\n• Minimize Driver Losses\n• Pb−Free andHalogen Free/BFR Free\n• RoHS Compliant;

ONSEMI

安森美半导体

Single N-Channel Power MOSFET 60V, 328A, 0.81mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Small Footprint (8x8 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• RoHS Compliant;

ONSEMI

安森美半导体