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NTMSD3P102

P 沟道增强模式功率 MOSFET 和肖特基二极管双 SO-8 封装; • High Efficiency Components in a Single SO-8 Package\n• High Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF\n• Independent Pin-Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use\n• Less Component Placement for Board Space Savings\n• SO-8 Surface Mount Package, Mounting Information for SO-8 Package Provided\n• Pb-Free Packages are Available\n\n;

NTMSD3P102\n\n

ONSEMION Semiconductor

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NTMSD3P102

Typical Uses for FETKY Devices

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMSD3P102R2

P?묬hannel Enhancement?묺ode Power MOSFET and Schottky Diode Dual SO?? Package

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMSD3P102R2

P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMSD3P102R2_06

P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMSD3P102R2G

P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMSD3P102R2SG

P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    NTMSD3P102

  • 功能描述:

    MOSFET -20V -3.05A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
SOP-8
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
ON
24+
9000
询价
ON
23+
SOP8
35890
询价
ON
24+
SOP8
5000
只做原装公司现货
询价
ON
23+
SOP8
8560
受权代理!全新原装现货特价热卖!
询价
ON
6000
面议
19
SMD
询价
原装ON
19+
SOP-8
20000
询价
ON/安森美
1942+
SOP-8
9852
只做原装正品现货或订货!假一赔十!
询价
ON
23+
SOP8
30000
代理全新原装现货,价格优势
询价
原装ON
24+
SOP-8
63200
一级代理/放心采购
询价
更多NTMSD3P102供应商 更新时间2025-7-26 17:00:00