NTHL040N65S3F数据手册ONSEMI中文资料规格书

描述 Description

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

特性 Features

• 700 V @ TJ = 150 oC
• Higher system reliability at low temperature operation
• Ultra Low Gate Charge (Typ. Qg = 158 nC)
• Lower switching loss
• Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)
• Lower switching loss
• Excellent body diode performance (low Qrr, robust body diode)
• Higher system reliability in LLC and Phase shift full bridge circuit
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• RoHS Compliant
• 100% Avalanche Tested
• Typ. RDS(on) = 32 mΩ

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS