NTE6355

Silicon Power Rectifier Diode, 300 Amp

Features: ●DiffusedDiode ●HighVoltageRatingsupto1600Volts ●HighSurgeCurrentCapabilities ●AvailableinAnode–to–CaseorCathode–to–CaseStyle

6355

SBE®320/SBX®350ConnectorsUpto550Amps

SBE®andSBX®connectorscanintegrateupto8auxiliarypower /signalcontactsalongwiththetwoprimarypowercircuits. Sequencingwithinauxiliarypositionsispossibleusingthe4pin lengthsavailableinthe1x4auxiliaryconnector.SBE®andSBX® offertouchsafehousings. •SilverPla

6355-BK

SBE®320/SBX®350ConnectorsUpto550Amps

SBE®andSBX®connectorscanintegrateupto8auxiliarypower /signalcontactsalongwiththetwoprimarypowercircuits. Sequencingwithinauxiliarypositionsispossibleusingthe4pin lengthsavailableinthe1x4auxiliaryconnector.SBE®andSBX® offertouchsafehousings. •SilverPla

6355-C

438PCBBarrierTerminalStrip,600V

6355-M

438PCBBarrierTerminalStrip,600V

6355-V

438PCBBarrierTerminalStrip,600V

C6355A

5C207/28TCPVPVCCOMMUNICATIONCABLE

CED6355

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-26A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU6355

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-26A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CPH6355

General-PurposeSwitchingDeviceApplications

Features •ON-resistanceRDS(on)1=130mΩ(typ.) •4Vdrive •Halogenfreecompliance