Bi-Directional Diode Thyristor (SIDAC)

NTE

MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：235.14 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =81mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：259.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET 100 V, 19 A, 74 m

文件：122.14 Kbytes 页数：7 Pages

ONSEMI

安森美半导体