MOSFET N-Ch, Enhancement Mode High Speed Switch

Description: The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features: ● Lower RDS(ON) ● Improved Inductive Ruggedness ● Fast Switching Times ● Lower

文件：26.92 Kbytes 页数：3 Pages

NTE

Integrated Circuit 64K-Bit Dynamic RAM

Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability. Features:

文件：39.49 Kbytes 页数：5 Pages

NTE

Numeric Listing

NTE

Integrated Circuit 64K-Bit Dynamic RAM

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