NTE6664中文资料NTE数据手册PDF规格书
NTE6664规格书详情
Description:
The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability.
Features:
● Single +5V Operation (±10)
● Maximum Access Time: 150ns
● Low Power Dissipation: 302.5mW Max (Active) 22mW Max (Standby)
● Three State Data Output
● Early–Write Common I/O Capability
● 128 Cycle, 2ms Refresh
● Control on Pin1 for Automatic or Self Refresh
● RAS–Only Refresh Mode
● CAS Controlled Output
● Fast Page Mode Cycle Time
● Low Soft Error Rate:
产品属性
- 型号：
NTE6664
- 制造商：
NTE Electronics
- 功能描述：
IC, DRAM, 64KBIT, DIP-16; Memory
- Type：
DRAM; Access
- Time：
150ns; Page
- Size：
64Kbit; Memory Case
- Style：
DIP; No. of
- Pins：
16; Operating Temperature
- Min：
0C; Operating Temperature
- Max：
70C; Memory
- Size：
64Kbit; Mounting
- Type：
Through Hole ;RoHS
- Compliant：
Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
188 |
询价 | |||||
NTE |
1636+ |
ZIP25 |
2235 |
代理品牌 |
询价 | ||
NTE |
23+ |
39612 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
NTE |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NTE ELECTRONICS INC |
2023+ |
SMD |
8053 |
安罗世纪电子只做原装正品货 |
询价 | ||
NTEELECTR |
23+ |
NA |
305 |
专做原装正品,假一罚百! |
询价 | ||
VBSEMI/台湾微碧 |
24+ |
SC-89 |
60000 |
全新原装现货 |
询价 | ||
NTE |
2450+ |
MN |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
VB |
25+ |
SC-89 |
10000 |
原装现货假一罚十 |
询价 |
