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SFS2955

AdvancedPowerMOSFET

FEATURES ❐AvalancheRuggedTechnology ❐RuggedGateOxideTechnology ❐LowerInputCapacitance ❐ImprovedGateCharge ❐175oCOperatingTemperature ❐ExtendedSafeOperatingArea ❐LowerLeakageCurrent:10µA(Max.)@VDS=-60V ❐LowRDS(ON):0.22Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SFU2955

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SFU2955

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=-60V ■LowerRDS(ON):0.22Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SFW2955

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=-60V ■LowRDS(ON):0.22Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SFW2955

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPX2955

350mALowDropOutVoltageRegulatorwithShutdown

PRODUCTDESCRIPTION TheSPX2955/56/57isalowpowervoltageregulator.Thisdeviceisanexcellentchoiceforuseinbattery-poweredapplicationssuchascordlesstelephones,radiocontrolsystems,andportablecomputers.TheSPX2955/56/57featuresverylowquiescentcurrent(100µATyp.)andver

SipexSipex Corporation

西伯斯西伯斯公司

T2955V

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

TGF2955

40WattDiscretePowerGaNonSiCHEMT

TriQuint

TriQuint Semiconductor

TIP2955

SiliconPNPPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@lc=-4A •Collector-EmitterSaturationVoltage-:VCE(sat)=-1.1V(Max)@lc=-4A •ComplementtoTypeTIP3055 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

TIP2955

ComplementarySiliconPowerTransistors

15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

供应商型号品牌批号封装库存备注价格
NTE
23+
39329
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
24+
N/A
78000
一级代理-主营优势-实惠价格-不悔选择
询价
5
全新原装 货期两周
询价
2022+
1
全新原装 货期两周
询价
NTE ELECTRONICS
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多NTE2955供应商 更新时间2025-7-29 16:35:00