N-Channel 60 V (D-S) MOSFET

文件：1.00628 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

40 Watt Discrete Power GaN on SiC HEMT

文件：1.5181 Mbytes 页数：19 Pages

TRIQUINT

COMPLEMENTARY SILICON POWER TRANSISTORS

NPN --> TIP3055 PNP --> TIP2955 Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ Gen

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STMICROELECTRONICS

意法半导体

POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：101.21 Kbytes 页数：4 Pages

ONSEMI

安森美半导体