Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -60V ■ Lower RDS(ON) : 0.22 Ω (Typ.)

文件：261.7 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：345.42 Kbytes 页数：2 Pages

ISC

无锡固电

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

文件：107.34 Kbytes 页数：3 Pages

MOSPEC

统懋

PNP SILICON POWER TRANSISTOR

• Designed for Complementary Use with the TIP3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current • Customer-Specified Selections Available

文件：95.23 Kbytes 页数：6 Pages

POINN

POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：101.21 Kbytes 页数：4 Pages

ONSEMI

安森美半导体