SFU2955

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=-60V ■LowerRDS(ON):0.22Ω(Typ.)

SFU2955

isc P-Channel MOSFET Transistor

SFW2955

iscP-ChannelMOSFETTransistor

SFW2955

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=-60V ■LowRDS(ON):0.22Ω(Typ.)

SPX2955

350mALowDropOutVoltageRegulatorwithShutdown

PRODUCTDESCRIPTION TheSPX2955/56/57isalowpowervoltageregulator.Thisdeviceisanexcellentchoiceforuseinbattery-poweredapplicationssuchascordlesstelephones,radiocontrolsystems,andportablecomputers.TheSPX2955/56/57featuresverylowquiescentcurrent(100µATyp.)andver

T2955V

N-Channel60V(D-S)MOSFET

TGF2955

40WattDiscretePowerGaNonSiCHEMT

TIP2955

ComplementarySiliconHighPowerTtransistors

PNPTIP2955 NPNTIP3055 DESCRIPTION TheTIP3055isasiliconEpitaxial-BasePlanarNPNtransistormountendinTO-247plasticpackage.Itisintentedforpowerswitchingcircuits,seriesandshuntregulators,outputstagesandhi-fiamplifiers. ThecomplementaryPNPtypeistheTIP295

TIP2955

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP3055 •90Wat25°Ccasetemperature •15Acontinuouscollectorcurrent APPLICATIONS •Designedforgeneral–purpose switchingandamplifierapplications.

TIP2955

SiliconPNPPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@lc=-4A •Collector-EmitterSaturationVoltage-:VCE(sat)=-1.1V(Max)@lc=-4A •ComplementtoTypeTIP3055 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications.