Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ 175oC Operating Temperature ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Low RDS(ON) : 0.22 Ω (Typ.)

文件：203.37 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -60V ■ Lower RDS(ON) : 0.22 Ω (Typ.)

文件：261.7 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc P-Channel MOSFET Transistor

文件：345.42 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -60V ■ Low RDS(ON) : 0.22 Ω (Typ.)

文件：250.44 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司