Silicon NPN Transistor Darlington Power Amplifier

Features: • Forward Current Transfer Ratio: hFE = 10,000 Min • Power Dissipation: 1.33W Free–Air @ TA = +50°C • Hard Solder Mountdown Applications: • Driver, IC Driver • Regulator • Touch Switch • Audio Output • Relay Substitute • Oscillator • Servo–Amplifier

文件：23.3 Kbytes 页数：2 Pages

NTE

NTE2649 (NPN) & NTE2650 (PNP) Silicon Complementary Transistors Darlington

NTE2649 (NPN) NTE2650 (PNP) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . .

文件：61.44 Kbytes 页数：3 Pages

NTE

Silicon NPN Transistor Horizontal Deflection Output for Ultrahigh−Definition CRT Display

Features: • High Speed • High Breakdown Voltage • High Reliability

文件：28.04 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Darlington Power Amplifier

Features: • Forward Current Transfer Ratio: hFE = 40,000 Min • Power Dissipation: 1.33W Free–Air @ TA = +50°C • Hard Solder Mountdown Applications: • Driver, IC Driver • Regulator • Touch Switch • Audio Output • Relay Substitute • Oscillator • Servo–Amplifier

文件：22.86 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Horizontal Deflection Output for HDTV

Features: • High Speed: tf = 0.15µs Typ • High Breakdown Voltage: VCBO = 1700V • Low Saturation Voltage: VCE(sat) = 3V Max

文件：71.37 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor High Frequency, Low Noise RF

Description: The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for os cillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high immunity to pushing effects. Features: • New Miniature Surface Mount Pac

文件：78.94 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Horizontal Deflection Output for High Resolution Display, Color TV

Features: • High Voltage: VCBO = 1700V • Low Saturation Voltage: VCE(sat) = 3V Max • High Speed: tf = 0.1μs Typ

文件：56 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor High Current Switching

Features: • Adoption of FBET, MBIT process • Large Current Capacitance • Low Collector-To-Emitter Saturation Voltage • High Speed Switching • High Allowable Power Dissipation Applications: • DC-DC Converter • Relay Drivers • Lamp Drivers • Motor Drivers • Strobes

文件：53.05 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor High Gain Darlington Power Amp, Switch

Features: • Forward Current Transfer Ratio: hFE = 90,000 min. • Free–Air Power Dissipation: 1.33W @ TA = +50°C • Hard Solder Mountdown Applications: • Driver • Regulator • Audio Output • Relay Substitute • Touch Switch • Oscillator • IC Driver • Servo Amplifie

文件：22.84 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications s

文件：21.3 Kbytes 页数：2 Pages

NTE