Silicon NPN Transistor Low Noise Audio Amplifier

Features: ● VCEO = 120V (Min) ● Low Noise: = 1dB (Typ), 10dB (Max)

文件：19.84 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ @ IC = 4A • Collector–Emitter Su

文件：24.86 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ @ IC = 4A • Collector–Emitter Su

文件：24.86 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

文件：24.89 Kbytes 页数：2 Pages

NTE

Integrated Circuit Quad Differential Line Driver

Functional Description: The NTE2631 is a quad differential line driver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type package designed for digital data transmission over balanced lines. This device meets all the requirements of EIA standard RS–422 and federal sta

文件：24.21 Kbytes 页数：3 Pages

NTE

Integrated Circuit Quad Differential Line Receiver

Functional Description: The NTE2632 is a quad line receiver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type package designed to meet the requirements of RS–422 and RS–423, and federal standards 1020 and 1030 for balanced and unbalanced digital data transmission. T

文件：25.57 Kbytes 页数：3 Pages

NTE

Silicon Complementary Transistors High Frequency Video Driver

Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics monitors. Features: • High Breakdown Voltage • Low Output Capacitance

文件：21.09 Kbytes 页数：2 Pages

NTE

Silicon Complementary Transistors High Frequency Video Driver

Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics monitors. Features: • High Breakdown Voltage • Low Output Capacitance

文件：21.09 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode

Description: The NTE2635 is an enhanced performance, new generation, high–voltage, high–speed switching NPN transistor with an integrated damper diode in a full–pack envelope intended for use in horizontal deflection circuits in color TV receivers. This device features exceptional tolerance to

文件：24.54 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode

Features: • High Breakdown Voltage: VCES = 1500V • Built–In Damper Diode • Isolated TO3PFM Type Package Applications: • TV/Character Display Horizontal Deflection Output

文件：23.2 Kbytes 页数：2 Pages

NTE