Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, Bare Die

Silicon Carbide (SiC) MOSFET uses a completely new technology\nthat provide superior switching performance and higher reliability\ncompared to Silicon. In addition, the low ON resistance and compact\nchip size ensure low capacitance and gate charge. Consequently,\nsystem benefits include highest eff • 1200 V\n• TJ= 175°C\n• High Speed Switching with Low Capacitance\n• 100% UIL Tested;

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MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 80 m

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MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A

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Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 80 m • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ. Coss = 80 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • U

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MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A

文件：288.69 Kbytes 页数：7 Pages

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