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NTC080N120SC1中文资料Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, Bare Die数据手册ONSEMI规格书

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厂商型号

NTC080N120SC1

功能描述

Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, Bare Die

制造商

ONSEMI ON Semiconductor

中文名称

安森美半导体

数据手册

下载地址下载地址二

更新时间

2025-9-25 23:01:00

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NTC080N120SC1规格书详情

描述 Description

Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.

特性 Features

• 1200 V
• TJ= 175°C
• High Speed Switching with Low Capacitance
• 100% UIL Tested

应用 Application

• Boost Inverter
• PV Charging
• Motor Drives
• UPS
• Charging Stations

技术参数

  • 制造商编号

    :NTC080N120SC1

  • 生产厂家

    :ONSEMI

  • Pb-free

    :Pb

  • Halide free

    :H

  • Status

    :Active

  • Channel Polarity

    :N-Channel

  • Configuration

    :Single

  • Blocking Voltage BVDSS (V)

    :1200

  • ID(max) (A)

    :20

  • RDS(on) Typ @ 25°C (mΩ)

    :80

  • Qg Total (C)

    :56

  • Output Capacitance (C)

    :120

  • Tj Max (°C)

    :175

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RUILON(瑞隆源)
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原厂封装
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6000
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19
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