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NTC080N120SC1数据手册ONSEMI中文资料规格书
NTC080N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.
特性 Features
• 1200 V
• TJ= 175°C
• High Speed Switching with Low Capacitance
• 100% UIL Tested
应用 Application
• Boost Inverter
• PV Charging
• Motor Drives
• UPS
• Charging Stations
技术参数
- 制造商编号
：NTC080N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- Blocking Voltage BVDSS (V)
：1200
- ID(max) (A)
：20
- RDS(on) Typ @ 25°C (mΩ)
：80
- Qg Total (C)
：56
- Output Capacitance (C)
：120
- Tj Max (°C)
：175
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NTC |
24+ |
DIP2 |
27950 |
郑重承诺只做原装进口现货 |
询价 | ||
恩XP |
24+ |
0805/SMD |
54200 |
新进库存/原装 |
询价 | ||
NTC |
23+ |
DIP |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
MICROCHIP/微芯 |
25+ |
NA |
996880 |
只做原装,欢迎来电资询 |
询价 | ||
MICROCHIP/微芯 |
22+ |
NA |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
VATRONICS |
23+ |
SMD |
38000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
SAMKYUN |
24+ |
DIP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
PHI |
05+ |
原厂原装 |
120 |
只做全新原装真实现货供应 |
询价 | ||
VATRONICS |
22+ |
SMD |
38000 |
原装现货样品可售 |
询价 |
