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NTB6N60

Power MOSFET 6 Amps, 600 Volts N−Channel TO−220

Designedforhighvoltage,highspeedswitchingapplicationsin powersupplies,converters,powermotorcontrolsandbridgecircuits. Features •HigherCurrentRating •LowerRDS(on) •LowerCapacitances •LowerTotalGateCharge •TighterVSDSpecifications •AvalancheEnergySpecified

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTP6N60

PowerMOSFET6Amps,600VoltsN−ChannelTO−220

Designedforhighvoltage,highspeedswitchingapplicationsin powersupplies,converters,powermotorcontrolsandbridgecircuits. Features •HigherCurrentRating •LowerRDS(on) •LowerCapacitances •LowerTotalGateCharge •TighterVSDSpecifications •AvalancheEnergySpecified

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTP6N60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

P6N60

600VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P6N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

PHB6N60BT

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PHB6N60E

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

PHB6N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP6N60Eissupplied

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP6N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHP6N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP6N60Eissupplied

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

详细参数

  • 型号:

    NTB6N60

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    ON Semiconductor

供应商型号品牌批号封装库存备注价格
ON/安森美
21+
D2PAK
60000
绝对原装正品现货,假一罚十
询价
onsemi(安森美)
24+
-
7793
支持大陆交货,美金交易。原装现货库存。
询价
ON/安森美
24+
NA
30000
房间原装现货特价热卖,有单详谈
询价
ON/安森美
23+
NA
19950
电子元器件供应原装现货. 优质独立分销。原厂核心渠道
询价
ON/安森美
22+
N/A
9939
现货,原厂原装假一罚十!
询价
ON/安森美
22+
NA
35000
原装现货,假一罚十
询价
MOT
23+
NTB6N60T4
13528
振宏微原装正品,假一罚百
询价
ON/安森美
23+
TO-263
38000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
询价
ON/安森美
24+
TO-263
30000
只做正品原装现货
询价
更多NTB6N60供应商 更新时间2025-6-11 9:11:00