Power MOSFET 6 Amps, 600 Volts N−Channel TO−220

Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified

文件：49.53 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10728 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Power MOSFET 6 Amps, 600 Volts N−Channel TO−220

Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified

文件：49.53 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

文件：536.76 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体