零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK Thisdeviceisbipolarjunctiontransistorfeaturinghighcurrent,low saturationvoltage,andhighspeedswitching. Suitableforautomotiveapplications.AEC−Q101qualifiedand PPAPcapable.(NSVS1001CLTWG) Features •ComplementtoNSS1002CL •LargeCurrentCapacitance •LowCollectorto | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK Thisdeviceisbipolarjunctiontransistorfeaturinghighcurrent,low saturationvoltage,andhighspeedswitching. Suitableforautomotiveapplications.AEC−Q101qualifiedand PPAPcapable.(NSVS1001CLTWG) Features •ComplementtoNSS1002CL •LargeCurrentCapacitance •LowCollectorto | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK Thisdeviceisbipolarjunctiontransistorfeaturinghighcurrent,low saturationvoltage,andhighspeedswitching.Suitableforautomotiveapplications.AEC−Q101qualifiedandPPAPcapable.(NSVS1002CLTWG) Features •ComplementtoNSS1001CL •LargeCurrentCapacitance •LowCollectortoE | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK Thisdeviceisbipolarjunctiontransistorfeaturinghighcurrent,low saturationvoltage,andhighspeedswitching.Suitableforautomotiveapplications.AEC−Q101qualifiedandPPAPcapable.(NSVS1002CLTWG) Features •ComplementtoNSS1001CL •LargeCurrentCapacitance •LowCollectortoE | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Bipolar Power Transistors 100 V, 3.0 A, Low VCE(sat) PNP Transistor ONSemiconductor’se2PowerEdgefamilyoflowVCE(sat) transistorsaresurfacemountdevicesfeaturingultra−lowsaturation voltage,VCE(sat),andhighcurrentgaincapability.Thesearedesigned foruseinlowervoltage,highspeedswitchingapplicationswhere affordableefficientenergycontr | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Low VCE(sat) NPN Transistors, 60 V, 1 A ONSemiconductor’se2PowerEdgefamilyoflowVCE(sat) transistorsareminiaturesurfacemountdevicesfeaturingultralow saturationvoltage(VCE(sat))andhighcurrentgaincapability.These aredesignedforuseinlowvoltage,highspeedswitchingapplications whereaffordableefficientener | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Low VCE(sat) NPN Transistors, 60 V, 1 A ONSemiconductor’se2PowerEdgefamilyoflowVCE(sat) transistorsareminiaturesurfacemountdevicesfeaturingultralow saturationvoltage(VCE(sat))andhighcurrentgaincapability.These aredesignedforuseinlowvoltage,highspeedswitchingapplications whereaffordableefficientener | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Low VCE(sat) NPN Transistors, 60 V, 1 A ONSemiconductor’se2PowerEdgefamilyoflowVCE(sat) transistorsareminiaturesurfacemountdevicesfeaturingultralow saturationvoltage(VCE(sat))andhighcurrentgaincapability.These aredesignedforuseinlowvoltage,highspeedswitchingapplications whereaffordableefficientener | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
TYPE WHITE LED
| NICHIANichia Corporation&Subsidiaries 日亚化学工业株式会社 | |||
TYPE WHITE LED SPECIFICATIONSFORNICHIACHIPTYPEWHITELED | NICHIANichia Corporation&Subsidiaries 日亚化学工业株式会社 | |||
SPECIFICATIONS FOR NICHIA CHIP TYPE WHITE LED SPECIFICATIONSFORNICHIACHIPTYPEWHITELED | NICHIANichia Corporation&Subsidiaries 日亚化学工业株式会社 | |||
SPECIFICATIONS FOR NICHIA CHIP TYPE WHITE LED SPECIFICATIONSFORNICHIACHIPTYPEWHITELED | NICHIANichia Corporation&Subsidiaries 日亚化学工业株式会社 | |||
SPECIFICATIONS FOR NICHIA CHIP TYPE WHITE LED SPECIFICATIONSFORNICHIACHIPTYPEWHITELED | NICHIANichia Corporation&Subsidiaries 日亚化学工业株式会社 | |||
SPECIFICATIONS FOR NICHIA CHIP TYPE WHITE LED SPECIFICATIONSFORNICHIACHIPTYPEWHITELED | NICHIANichia Corporation&Subsidiaries 日亚化学工业株式会社 | |||
12 V, 1 A, Low VCE(sat) PNP Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
12 V, 1 A, Low VCE(sat) PNP Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNP Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNP Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
12 V, 1 A, Low VCE(sat) PNP Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNP Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GC |
2022+ |
SOT-23 |
5000 |
只做原装公司现货 |
询价 | ||
23+ |
N/A |
49000 |
正品授权货源可靠 |
询价 | |||
GC |
SOT-23 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
GC |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
GC |
21+ |
SOT-23 |
10000 |
原装现货假一罚十 |
询价 | ||
GC |
2022 |
SOT-23 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
GC |
22+ |
SOT-23 |
30975 |
询价 | |||
GC |
SOT-23 |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
GC |
22+21+ |
SOT-23 |
30975 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
GC |
23+ |
NA/ |
30975 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
相关规格书
更多- NSS1002CL
- NSS12100M3T5G
- NSS12100UW3TCG
- NSS12100XV6T1G
- NSS12200LT1G
- NSS12200LT1G
- NSS12200WT1G
- NSS12200WT1G
- NSS12200WT1G_13
- NSS12201LT1G
- NSS12500UW3T2G
- NSS12500UW3T2G
- NSS12501UW3T2G
- NSS12600CF8T1G
- NSS12601CF8T1G
- NSS1C200L
- NSS1C200LT1G
- NSS1C200LT1G
- NSS1C200MZ4
- NSS1C200MZ4_10
- NSS1C200MZ4T3G
- NSS1C200T1G
- NSS1C200T3G
- NSS1C201L
- NSS1C201LT1G
- NSS1C201MZ4
- NSS1C201MZ4
- NSS1C201MZ4_13
- NSS1C201MZ4T1G
- NSS1C201MZ4T3G
- NSS1C201MZ4T3G
- NSS1C300E
- NSS1C300ET4G
- NSS1C301ET4G
- NSS1C301ET4G
- NSS1C301ET4G_16
- NSS20101J
- NSS20101JT1G
- NSS20200LT1G
- NSS20200LT1G
- NSS20200LT1G_07
- NSS20200LT1G_16
- NSS20200W6T1G
- NSS20201LT1G
- NSS20201LT1G_11
相关库存
更多- NSS1002CLTWG
- NSS12100UW3TCG
- NSS12100UW3TCG_14
- NSS12200L
- NSS12200LT1G
- NSS12200LT1G_09
- NSS12200WT1G
- NSS12200WT1G_09
- NSS12201LT1G
- NSS12201LT1G_16
- NSS12500UW3T2G
- NSS12500UW3T2G_07
- NSS12600CF8T1G
- NSS12600CF8T1G_07
- NSS1C200L
- NSS1C200L_16
- NSS1C200LT1G
- NSS1C200LT1G_15
- NSS1C200MZ4
- NSS1C200MZ4T1G
- NSS1C200T1G
- NSS1C200T3G
- NSS1C201L
- NSS1C201L_14
- NSS1C201LT1G
- NSS1C201MZ4
- NSS1C201MZ4_10
- NSS1C201MZ4T1G
- NSS1C201MZ4T1G
- NSS1C201MZ4T3G
- NSS1C300CTWG
- NSS1C300ET4G
- NSS1C300ET4G_15
- NSS1C301ET4G
- NSS1C301ET4G_14
- NSS20101J
- NSS20101J_13
- NSS20101JT1G
- NSS20200LT1G
- NSS20200LT1G
- NSS20200LT1G_11
- NSS20200W6
- NSS20201LT1G
- NSS20201LT1G
- NSS20201LT1G_16