丝印：NSS；Package：VSON(DRM)；OPAx277 High-Precision Operational Amplifiers

1 Features • Ultra-low offset voltage: 10 μV • Ultra-low drift: ±0.1 μV/°C • High open-loop gain: 134 dB • High common-mode rejection: 140 dB • High power-supply rejection: 130 dB • Low bias current: 1-nA maximum • Wide supply range: ±2 V to ±18 V • Low quiescent current: 800 μA/amplifier

文件：1.6639 Mbytes 页数：43 Pages

TI

德州仪器

丝印：NSS；Package：VSON(DRM)；OPAx277 High-Precision Operational Amplifiers

1 Features • Ultra-low offset voltage: 10 μV • Ultra-low drift: ±0.1 μV/°C • High open-loop gain: 134 dB • High common-mode rejection: 140 dB • High power-supply rejection: 130 dB • Low bias current: 1-nA maximum • Wide supply range: ±2 V to ±18 V • Low quiescent current: 800 μA/amplifier

文件：1.6639 Mbytes 页数：43 Pages

TI

德州仪器

丝印：NSS；Package：VSON(DRM)；OPAx277 High-Precision Operational Amplifiers

1 Features • Ultra-low offset voltage: 10 μV • Ultra-low drift: ±0.1 μV/°C • High open-loop gain: 134 dB • High common-mode rejection: 140 dB • High power-supply rejection: 130 dB • Low bias current: 1-nA maximum • Wide supply range: ±2 V to ±18 V • Low quiescent current: 800 μA/amplifier

文件：1.6639 Mbytes 页数：43 Pages

TI

德州仪器

丝印：NSS；Package：VSON(DRM)；OPAx277 High-Precision Operational Amplifiers

1 Features • Ultra-low offset voltage: 10 μV • Ultra-low drift: ±0.1 μV/°C • High open-loop gain: 134 dB • High common-mode rejection: 140 dB • High power-supply rejection: 130 dB • Low bias current: 1-nA maximum • Wide supply range: ±2 V to ±18 V • Low quiescent current: 800 μA/amplifier

文件：1.6639 Mbytes 页数：43 Pages

TI

德州仪器

丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1002CLTWG) Features • Complement to NSS1001CL • Large Current Capacitance • Low Collector to E

文件：369.2 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1002CLTWG) Features • Complement to NSS1001CL • Large Current Capacitance • Low Collector to E

文件：369.2 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1001G；Package：LFPAK8；Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1001CLTWG) Features • Complement to NSS1002CL • Large Current Capacitance • Low Collector to

文件：384.17 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：NSS1002G；Package：LFPAK8；Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. (NSVS1002CLTWG) Features • Complement to NSS1001CL • Large Current Capacitance • Low Collector to E

文件：369.2 Kbytes 页数：7 Pages

ONSEMI

安森美半导体