Glass Passivated General Purpose Plastic Rectifier

FEATURES • Glass passivated chip junction • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in accordance to RoHS 2002/95/E

文件：131.47 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High forward current capability ♦ High surge current capability ♦ Low forward voltage drop ♦ Glass passivated chip junction ♦ High temp

文件：84.21 Kbytes 页数：2 Pages

GE

Rectifier Diode

FEATURES · High forward current capability · High surge current capability · Low forward voltage drop · Low forward voltage drop APPLICATIONS · General purpose rectification of power supplies · Inverters · Converters · Freewheeling diodes application

文件：280.93 Kbytes 页数：2 Pages

ISC

无锡固电

GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High forward current capability ♦ High surge current capability ♦ Low forward voltage drop ♦ Glass passivated chip junction ♦ High temp

文件：84.21 Kbytes 页数：2 Pages

GE

Glass Passivated General Purpose Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for D2PAK (TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 for TO-220AC package • AEC-Q1

文件：125.92 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual PNP Bias Resistor Transistors

Dual PNP Bias Resistor Transistors R1 = 1 kΩ, R2 = 1 kΩ PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a m

文件：75.03 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual PNP Bias Resistor Transistors

Dual PNP Bias Resistor Transistors R1 = 1 kΩ, R2 = 1 kΩ PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a m

文件：75.03 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual Digital Transistors (BRT)

Dual PNP Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a

文件：102.55 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual PNP Bias Resistor Transistors

Dual PNP Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a

文件：123.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual PNP Bias Resistor Transistors

Dual PNP Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a

文件：123.96 Kbytes 页数：8 Pages

ONSEMI

安森美半导体