首页>NSBA114EDXV6T1G>规格书详情

NSBA114EDXV6T1G中文资料安森美半导体数据手册PDF规格书

NSBA114EDXV6T1G
厂商型号

NSBA114EDXV6T1G

功能描述

Dual PNP Bias Resistor Transistors

文件大小

123.96 Kbytes

页面数量

8

生产厂商 ON Semiconductor
企业简称

ONSEMI安森美半导体

中文名称

安森美半导体公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-5-19 23:00:00

人工找货

NSBA114EDXV6T1G价格和库存,欢迎联系客服免费人工找货

NSBA114EDXV6T1G规格书详情

Dual PNP Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ

PNP Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable*

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

产品属性

  • 型号:

    NSBA114EDXV6T1G

  • 功能描述:

    开关晶体管 - 偏压电阻器 100mA 50V Dual PNP

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶体管极性:

    NPN/PNP

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    直流集电极/Base Gain hfe

  • Min:

    200 mA

  • 最大工作频率:

    集电极—发射极最大电压

  • VCEO:

    50 V

  • 集电极连续电流:

    150 mA

  • 功率耗散:

    200 mW

  • 封装:

    Reel

供应商 型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
SOT-563
3727
原厂订货渠道,支持BOM配单一站式服务
询价
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
onsemi
24+
SOT-563,SOT-666
30000
晶体管-分立半导体产品-原装正品
询价
ON
08+
SOT-563
3820
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON
24+/25+
3840
原装正品现货库存价优
询价
ON
24+
SOT-563
25000
ON全系列可订货
询价
ON/安森美
2223+
SOT-563
26800
只做原装正品假一赔十为客户做到零风险
询价
ON
6000
面议
19
SOT563
询价
ON
23+
SOT-563
3820
正规渠道,只有原装!
询价
ON/安森美
2023+
SOT-563
3680
十五年行业诚信经营,专注全新正品
询价