Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metalïtoïsilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and p

文件：267.71 Kbytes 页数：6 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metalïtoïsilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and p

文件：267.71 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier, Surface Mount, 2.0 A, 60 V, SMB Package

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling d • Compact Package with J–Bend Leads Ideal for Automated Handling\n• Automotive Grade and PPAP Capable\n• Highly Stable Oxide Passivated Junction\n• Guardring for Over–Voltage Protection\n• Low Forward Voltage DropMechanical Characteristics:\n• Case: Molded Epoxy\n• Epoxy Meets UL94, VO at 1/8 inch\n;

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安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 2A 60V 1202 SMB2

ONSEMI

安森美半导体