NP48N055CLE-S12-AZ技术资料参数原装现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NP48N055CLE-S12-AZ	文件：307.45 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 21 mΩ MAX. (VGS = 5 V, ID = 24 A) RDS(on)3 = 24 mΩ MAX. (VGS = 4.5 V, ID = 24 A) • Low input capacitance Ciss = 1970 文件：307.45 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP48N055CLE-S12-AZ	文件：220.89 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 21 mΩ MAX. (VGS = 5 V, ID = 2 文件：220.89 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NP48N055CLE-S12-AZNote1,2	文件：308.03 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET 文件：308.03 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NPA-100B-015A	文件：0 bytes Page：0 Pages	14-SOIC 模块	Amphenol Advanced Sensors 上传：深圳市汇创佳电子科技有限公司	Amphenol Advanced Sensors
NPA-500B-005G	文件：0 bytes Page：0 Pages	14-SMD 模块	Amphenol Advanced Sensors 上传：深圳市汇创佳电子科技有限公司	Amphenol Advanced Sensors

更多NP48N055CLE-S12-AZ供应商更新时间2026-9-27 11:10:00