首页 >NP48N055KHE>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NP48N055KHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low input capacitance Ciss = 1600 pF T 文件：218.63 Kbytes 页数：10 Pages | NEC 瑞萨 | NEC | |
NP48N055KHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low input capacitance Ciss = 1600 pF TYP. • Built-in gate protection diode 文件：305.15 Kbytes 页数：12 Pages | RENESAS 瑞萨 | RENESAS | |
NP48N055KHE | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：345.37 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low input capacitance Ciss = 1600 pF T 文件：218.63 Kbytes 页数：10 Pages | NEC 瑞萨 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low input capacitance Ciss = 1600 pF TYP. • Built-in gate protection diode 文件：305.15 Kbytes 页数：12 Pages | RENESAS 瑞萨 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low input capacitance Ciss = 1600 pF TYP. • Built-in gate protection diode 文件：305.15 Kbytes 页数：12 Pages | RENESAS 瑞萨 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low input capacitance Ciss = 1600 pF T 文件：218.63 Kbytes 页数：10 Pages | NEC 瑞萨 | NEC | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：305.74 Kbytes 页数：12 Pages | RENESAS 瑞萨 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：305.74 Kbytes 页数：12 Pages | RENESAS 瑞萨 | RENESAS | ||
NP48N055KHE | Power MOSFETs-Power MOSFETs for Automotive | Renesas 瑞萨 | Renesas |
技术参数
- Ciss (pF) typ.：
1600
- Downloadable：
SPICE
- Vgs (off) (V) max.：
4
- Package Type：
MP-25ZK/TO-263
- VGSS (V)：
20
- Nch/Pch：
Nch
- Pch (W)：
85
- Number of Channels：
Single
- Application：
Automotive Use
- Automotive：
YES
- Mounting Type：
Surface Mount
- VDSS (V) max.：
55
- Series Name：
NP Series
- ID (A)：
48
- QG (nC) typ.：
33
- RDS (ON) (mohm) max. @10V or 8V：
17
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
TO-263 |
8866 |
询价 | |||
VB |
25+ |
D2PAK |
10000 |
原装现货假一罚十 |
询价 | ||
NEC |
2022+ |
TO-263 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
询价 | ||
RENESAS/瑞萨 |
20+ |
TO-263 |
32500 |
现货很近!原厂很远!只做原装 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-263 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
R |
25+ |
D2PAK |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
询价 | ||
RENESAS/瑞萨 |
22+ |
LQFP |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
Renesas Electronics America |
2022+ |
- |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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