NGTB20N120IH中文资料IGBT，20 A，1200V，TO247数据手册ONSEMI规格书

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides and
superior performance in demanding switching applications, and offers
low on−state voltage with minimal switching loss. The IGBT is well
suited for resonant or soft switching applications.

特性 Features

Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
This is a Pb−Free Device

应用 Application

Inductive HeatingConsumer AppliancesSoft Switching

简介

NGTB20N120IH属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的NGTB20N120IH晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。