NEZ1414-2E

2W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION TheNEZ1011-2EandNEZ1414-2EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50Ωexternalcircuit.Toreducethermalresistancethedevic

NEZ1414-2E

GaAs MES FET

2WKu-BANDPOWERGaAsFET N-CHANNELGaAsMESFET DESCRIPTION TheNEZ1414-2EispowerGaAsFETwhichprovides highgain,highefficiencyandhighoutputpowerinKuband. Theinternalinputandoutputmatchingenables guaranteedperformancetobeachievedwithonlya50W externalcircuit.

EIA1414-2P

14.0-14.5GHz,2WInternallyMatchedPowerFET

14.0-14.5GHz,2WInternallyMatchedPowerFET •14.0-14.5GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •EIAFEATURESHIGHPAE(30TYPICAL) •EIBFEATURESHIGHIP3(46dBmTYPICAL) •+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB •9.0/8.0dBTYPICALG1dBPOWERGAINFOREIA/EI

EIB1414-2P

14.0-14.5GHz,2WInternallyMatchedPowerFET

14.0-14.5GHz,2WInternallyMatchedPowerFET •14.0-14.5GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •EIAFEATURESHIGHPAE(30TYPICAL) •EIBFEATURESHIGHIP3(46dBmTYPICAL) •+33.5/+33.0dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB •9.0/8.0dBTYPICALG1dBPOWERGAINFOREIA/EI

EIC1414-2

14.00-14.50GHz2-WattInternally-MatchedPowerFET

TIM1414-2L

MICROWAVEPOWERGaAsFET

FEATURES ■HIGHPOWERP1dB=33.5dBmat14.0GHzto14.5GHz ■HIGHGAING1dB=6.5dBat14.0GHzto14.5GHz ■BROADBANDINTERNALLYMATCHEDFET ■HERMETICALLYSEALEDPACKAGE

TMD1414-2C

MICROWAVEPOWERMMICAMPLIFIER

FEATURES ■HIGHPOWER P1dB=34.5dBmat13.75GHzto14.5GHz ■HIGHGAIN G1dB=26.0dBat13.75GHzto14.5GHz ■BROADBANDINTERNALLYMATCHED ■HERMETICALLYSEALEDPACKAGE