4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

文件：108.79 Kbytes 页数：18 Pages

NEC

瑞萨

MICROWAVE POWER GAAS FET

文件：144.54 Kbytes 页数：5 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

文件：70.5 Kbytes 页数：4 Pages

TOSHIBA

东芝

5.90-6.40 GHz 4-Watt Internally Matched Power FET

文件：162.06 Kbytes 页数：4 Pages

Excelics

5.9 - 6.4 GHz Multi-Stage Power Amplifier

文件：104.73 Kbytes 页数：3 Pages

Excelics

C-Band Internally Matched FET

[Endyna] DESCRIPTION The FLM5964-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • High Ou

文件：251.13 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商