4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

文件：108.79 Kbytes 页数：18 Pages

NEC

瑞萨

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

文件：108.79 Kbytes 页数：18 Pages

NEC

瑞萨

MICROWAVE POWER GaAs FET

文件：47.63 Kbytes 页数：4 Pages

TOSHIBA

东芝

6.40-7.20GHz 8-Watt Internally-Matched Power FET

文件：169.77 Kbytes 页数：4 Pages

EXCELICS

6.40-7.20GHz 8-Watt Internally-Matched Power FET

文件：169.77 Kbytes 页数：4 Pages

EXCELICS

C-Band Internally Matched FET

[Eudyna] DESCRIPTION The FLM6472-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURE

文件：256.45 Kbytes 页数：4 Pages

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