2W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

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NEC

瑞萨

GaAs MES FET

2 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ1414-2E is power GaAs FET which provides high gain, high efficiency and high output power in Kuband. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit.

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RENESAS

瑞萨

MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=33.5dBm at 14.0GHz to 14.5GHz ■ HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

文件：163.68 Kbytes 页数：4 Pages

TOSHIBA

东芝

MICROWAVE POWER MMIC AMPLIFIER

FEATURES ■ HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz ■ HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

文件：43.86 Kbytes 页数：2 Pages

TOSHIBA

东芝