4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

文件：108.79 Kbytes 页数：18 Pages

NEC

瑞萨

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

文件：108.79 Kbytes 页数：18 Pages

NEC

瑞萨

MICROWAVE POWER GaAs FET

文件：70.5 Kbytes 页数：4 Pages

TOSHIBA

东芝

X2 HDMI FACE PLATE

Features: • 2 HDMI connectors • 2 female connectors • 2 male connectors • Standard cable lengths 5m, 7m, 10m, 15m, 20m Description: Our single faceplate has two HDMI connectors. This standard faceplate comes with two female connectors on the front and two male connectors on the other end of

文件：209.11 Kbytes 页数：1 Pages

TTELEC

4.40-5.00 GHz 4-Watt Internally Matched Power FET

FEATURES • 4.40–5.00GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +36.5 dBm Output Power at 1dB Compression • 11.5 dB Power Gain at 1dB Compression • 37 Power Added Efficiency • -46 dBc IM3 at PO = 25.5 dBm SCL • 100 Tested for DC, RF, and RTH

文件：184.55 Kbytes 页数：4 Pages

EXCELICS

4.40-5.00 GHz 4-Watt Internally Matched Power FET

FEATURES • 4.40–5.00GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +36.5 dBm Output Power at 1dB Compression • 11.5 dB Power Gain at 1dB Compression • 37 Power Added Efficiency • -46 dBc IM3 at PO = 25.5 dBm SCL • 100 Tested for DC, RF, and RTH

文件：184.55 Kbytes 页数：4 Pages

EXCELICS