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NESG2031M16-T3-A中文资料瑞萨数据手册PDF规格书
NESG2031M16-T3-A规格书详情
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
产品属性
- 型号：
NESG2031M16-T3-A
- 功能描述：
射频硅锗晶体管 NPN High Frequency
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
询价 | ||
NEC |
17+ |
SOT343 |
6200 |
100%原装正品现货 |
询价 | ||
NEC |
24+ |
SMD |
16200 |
新进库存/原装 |
询价 | ||
NEC |
24+ |
SOT343 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
CEL |
16+ |
SOT-523 |
15000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
询价 | ||
CEL |
2022+ |
SOT-523 |
20000 |
只做原装进口现货.假一罚十 |
询价 | ||
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
CEL |
2022+ |
3 针 SuperMiniMold(M33) |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
询价 |
