NPN SILICON TRANSISTOR

DESCRIPTION The NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/flat lead style M03 package is ideal for todays portable wireless

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NEC

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NPN SILICON TRANSISTOR

DESCRIPTION The NE856M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/flat lead style M13 package is ideal for todays portable wireless

文件：19.26 Kbytes 页数：2 Pages

NEC

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NPN SILICON TRANSISTOR

DESCRIPTION The NE856M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/ceramic substrate style M23 package is ideal for todays portable w

文件：19.55 Kbytes 页数：2 Pages

NEC

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NPN SILICON TRANSISTOR

DESCRIPTION The NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low current operation, low noise, and high gain. NECs new low profile/flat lead style M13 package is ideal for todays portable wireless applications. FEATURES • NEW MINIAT

文件：66.36 Kbytes 页数：8 Pages

NEC

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GaAs MES FET

文件：445.37 Kbytes 页数：8 Pages

RENESAS

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GaAs MES FET

文件：445.37 Kbytes 页数：8 Pages

RENESAS

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GaAs MES FET

文件：445.37 Kbytes 页数：8 Pages

RENESAS

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GaAs MES FET

文件：445.37 Kbytes 页数：8 Pages

RENESAS

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GaAs MES FET

文件：641.62 Kbytes 页数：10 Pages

RENESAS

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GaAs MES FET

文件：641.62 Kbytes 页数：10 Pages

RENESAS

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