NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

文件：70.63 Kbytes 页数：7 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE661M04 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE661M04 is usable in applications from 100 MHz to 10 GHz. The NE661M04 provides excellent low voltage/low current performance. NECs new low profile/flat lead style

文件：188.31 Kbytes 页数：10 Pages

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NPN SILICON HIGH FREQUENCY TRANSISTOR

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NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

文件：70.63 Kbytes 页数：7 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE661M04 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE661M04 is usable in applications from 100 MHz to 10 GHz. The NE661M04 provides excellent low voltage/low current performance. NECs new low profile/flat lead style

文件：227.74 Kbytes 页数：10 Pages

CEL

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE661M04 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE661M04 is usable in applications from 100 MHz to 10 GHz. The NE661M04 provides excellent low voltage/low current performance. NECs new low profile/flat lead style

文件：188.31 Kbytes 页数：10 Pages

CEL