SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER FEATURES • P–1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

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NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal devic

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NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal devic

文件：27.2 Kbytes 页数：2 Pages

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SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

文件：327.1 Kbytes 页数：14 Pages

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SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

文件：327.1 Kbytes 页数：14 Pages

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NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal devic

文件：27.2 Kbytes 页数：2 Pages

NEC

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NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION

DESCRIPTION The NE698M01 is an NPN high frequency silicon epitaxial transistor (NE686) encapsulated in an ultra small 6 pin SOT-363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE698M01 is ideal for

文件：60.7 Kbytes 页数：8 Pages

NEC

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NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION

DESCRIPTION The NE698M01 is an NPN high frequency silicon epitaxial transistor (NE686) encapsulated in an ultra small 6 pin SOT-363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE698M01 is ideal for

文件：60.7 Kbytes 页数：8 Pages

NEC

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NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

DESCRIPTION The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT-363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for

文件：50.36 Kbytes 页数：6 Pages

NEC

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

DESCRIPTION The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT-363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for

文件：50.36 Kbytes 页数：6 Pages

NEC

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