SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a

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NEC

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SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a

文件：231.06 Kbytes 页数：19 Pages

NEC

瑞萨

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a

文件：231.06 Kbytes 页数：19 Pages

NEC

瑞萨

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a

文件：231.06 Kbytes 页数：19 Pages

NEC

瑞萨

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688s low phase noise distortion and high fT make it a

文件：231.06 Kbytes 页数：19 Pages

NEC

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The NE688M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/flat lead style M03 package is ideal for todays portable wireless

文件：35.5 Kbytes 页数：3 Pages

NEC

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NPN SILICON TRANSISTOR

DESCRIPTION The NE688M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/flat lead style M13 package is ideal for todays portable wireless

文件：19.78 Kbytes 页数：2 Pages

NEC

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NPN SILICON TRANSISTOR

DESCRIPTION The NE688M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/ceramic substrate style M23 package is ideal for todays portable w

文件：19.12 Kbytes 页数：2 Pages

NEC

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SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER FEATURES • P–1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 • 4-Pin Mini Mold Package EIAJ: SC-61

文件：327.68 Kbytes 页数：14 Pages

RENESAS

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NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal devic

文件：27.47 Kbytes 页数：2 Pages

NEC

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