NE699M01-T1中文资料瑞萨数据手册PDF规格书

DESCRIPTION

The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT-363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations.

FEATURES

• HIGH fT:

16 GHz TYP at 2 V, 20 mA

• LOW NOISE FIGURE:

NF = 1.1 dB TYP at 2 GHz

• HIGH GAIN:

|S21E|2 = 14 dB TYP at f = 2 GHz

• 6 PIN SMALL MINI MOLD PACKAGE

• EXCELLENT LOW VOLTAGE,

LOW CURRENT PERFORMANCE