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NE42484A

HETERO JUNCTION FIELD EFFECT TRANSISTOR

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

文件:189 Kbytes 页数:12 Pages

RENESAS

瑞萨

NE42484A-SL

丝印:M;HETERO JUNCTION FIELD EFFECT TRANSISTOR

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

文件:189 Kbytes 页数:12 Pages

RENESAS

瑞萨

NE42484A-T1

丝印:M;HETERO JUNCTION FIELD EFFECT TRANSISTOR

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

文件:189 Kbytes 页数:12 Pages

RENESAS

瑞萨

NE42484A-T1A

丝印:M;HETERO JUNCTION FIELD EFFECT TRANSISTOR

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

文件:189 Kbytes 页数:12 Pages

RENESAS

瑞萨

NE42484C

HETERO JUNCTION FIELD EFFECT TRANSISTOR

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

文件:194.62 Kbytes 页数:12 Pages

RENESAS

瑞萨

NE42484C-SL

丝印:K;HETERO JUNCTION FIELD EFFECT TRANSISTOR

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

文件:194.62 Kbytes 页数:12 Pages

RENESAS

瑞萨

NE42484C-T1

丝印:K;HETERO JUNCTION FIELD EFFECT TRANSISTOR

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

文件:194.62 Kbytes 页数:12 Pages

RENESAS

瑞萨

NE42484C-T1A

丝印:K;HETERO JUNCTION FIELD EFFECT TRANSISTOR

C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE

文件:194.62 Kbytes 页数:12 Pages

RENESAS

瑞萨

NE42484A

NONLINEAR MODEL

文件:72.34 Kbytes 页数:2 Pages

NEC

瑞萨

NE42484A

NONLINEAR MODEL

Renesas

瑞萨

详细参数

  • 型号:

    NE42484

  • 功能描述:

    MOSFET REORD 551-NE334S01

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
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24+
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5000
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更多NE42484供应商 更新时间2025-10-30 11:00:00