NE12

DIN Rail circuit protective devices

General •NEMA12enclosure •Allmodeprotection(L-L/L-N/L-G/N-G) •Auxiliarycontactsforremotemonitoring •Safetydisconnect,fused •LEDpoweron/faultindicator •Audiblealarm MOVtechnology •160kAor320kAperphase •ReplaceableMOVblocks •VisualandaudibleMOVreplacement

NE12

CABLE CLAMPS, PLASTISOL DIPPED

NE12

包装：散装 类别：电缆，电线 - 管理 电缆支撑与紧固件 描述：CBL CLAMP P-TYPE FASTENER

NE1280

HETERO JUNCTION FIELD EFFECT TRANSISTOR

K-BANDMEDIUMPOWERAMPLIFIE N-CHANNELHJ-FETCHIPS DESCRIPTION TheNE1280seriesismediumpowerHJ-FETchips whichofferhighoutputpowerandhighgainfortelecom transmitpoweramplifierapplicationsto30GHz. NE1280100isonecelldieof450mmgatewidth, offering0.1Woutputpo

NE1280100

HETERO JUNCTION FIELD EFFECT TRANSISTOR

K-BANDMEDIUMPOWERAMPLIFIE N-CHANNELHJ-FETCHIPS DESCRIPTION TheNE1280seriesismediumpowerHJ-FETchips whichofferhighoutputpowerandhighgainfortelecom transmitpoweramplifierapplicationsto30GHz. NE1280100isonecelldieof450mmgatewidth, offering0.1Woutputpo

NE1280200

HETERO JUNCTION FIELD EFFECT TRANSISTOR

K-BANDMEDIUMPOWERAMPLIFIE N-CHANNELHJ-FETCHIPS DESCRIPTION TheNE1280seriesismediumpowerHJ-FETchips whichofferhighoutputpowerandhighgainfortelecom transmitpoweramplifierapplicationsto30GHz. NE1280100isonecelldieof450mmgatewidth, offering0.1Woutputpo

NE1280400

HETERO JUNCTION FIELD EFFECT TRANSISTOR

K-BANDMEDIUMPOWERAMPLIFIE N-CHANNELHJ-FETCHIPS DESCRIPTION TheNE1280seriesismediumpowerHJ-FETchips whichofferhighoutputpowerandhighgainfortelecom transmitpoweramplifierapplicationsto30GHz. NE1280100isonecelldieof450mmgatewidth, offering0.1Woutputpo

NE12FAAH0-0-B

N e u t r i k 짰 P a r t N u m b e r G u i d e

NE12FAH0-0-B

N e u t r i k 짰 P a r t N u m b e r G u i d e

NE12MAAH0-0-B

N e u t r i k 짰 P a r t N u m b e r G u i d e