HETERO JUNCTION FIELD EFFECT TRANSISTOR

K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom transmit power amplifier applications to 30 GHz. NE1280100 is one cell die of 450 mm gate width, offering 0.1 W output po

文件：170.09 Kbytes 页数：8 Pages

RENESAS

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom transmit power amplifier applications to 30 GHz. NE1280100 is one cell die of 450 mm gate width, offering 0.1 W output po

文件：170.09 Kbytes 页数：8 Pages

RENESAS

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom transmit power amplifier applications to 30 GHz. NE1280100 is one cell die of 450 mm gate width, offering 0.1 W output po

文件：170.09 Kbytes 页数：8 Pages

RENESAS

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom transmit power amplifier applications to 30 GHz. NE1280100 is one cell die of 450 mm gate width, offering 0.1 W output po

文件：170.09 Kbytes 页数：8 Pages

RENESAS

瑞萨