Dual Self-Protected Low-Side Driver

文件：95.35 Kbytes 页数：11 Pages

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Self-Protected Low Side Driver

文件：114.87 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

Self-Protected Low Side Driver

文件：114.87 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

Self-Protected Low Side Driver

文件：114.87 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

Self-Protected Low Side Driver with Temperature and Current Limit

文件：128.62 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Self-Protected Low Side Driver with Temperature and Current Limit

文件：128.62 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Self-Protected Low Side Driver

文件：114.87 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

自保护 N 沟道功率 MOSFET

NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. • Short Circuit Protection\n• Thermal Shutdown with Automatic Restart\n• Integrated Clamp for Inductive Switching\n• ESD Protection\n• dV/dt Robustness\n• Analog Drive Capability (Logic Level Input)\n• AEC-Q101 Qualified\n• NCV Prefix for Automotive and Other Applications Requiring Site and Change C;

ONSEMI

安森美半导体

Dual Self-Protected N-Channel Power MOSFET

NCV8402 is a two channel, three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. • Short Circuit Protection\n• Thermal Shutdown with Automatic Restart\n• Integrated Clamp for Inductive Switching\n• ESD Protection\n• dV/dt Robustness\n• Analog Drive Capability (Logic Level Input)\n• AEC-Q101 Qualified\n• NCV Prefix for Automotive and Other Applications Requiring Site and Change C;

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安森美半导体

Package：6-VDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 6DFN

ONSEMI

安森美半导体